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1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks

机译：具有高k栅极堆叠的mOsFET的漏极和栅极电流中的1 / f噪声

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P. Magnone; F. Crupi; G. Giusi; C. Pace; E. Simoen; C. Claeys; L. Pantisano; D. Maji; V. Ramgopal Rao; Senior Member; P. Srinivasan;
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1. $1/f$ Noise in Drain and Gate Current of MOSFETs With High-$k$ Gate Stacks [J] . Magnone P., Crupi F., Giusi G., Device and Materials Reliability, IEEE Transactions on . 2009,第2期

机译：具有高$ k $栅极堆叠的MOSFET的漏极和栅极电流中的$ 1 / f $噪声
2. Impact of high-k gate stack material with metal gates on LF noise in n- and p-MOSFETs [J] . P. Srinivasan, E. Simoen, L. Pantisano, Microelectronic Engineering . 2005,第Jun期

机译：高k栅极堆叠材料和金属栅极对n和p-MOSFET中LF噪声的影响
3. Enhanced degradation of n-MOSFETs with high-k/metal gate stacks under channel hot-carrier/gate-induced drain leakage alternating stress [J] . Dongwoo Kim, Seonhaeng Lee, Cheolgyu Kim, Microelectronics & Reliability . 2012,第9a10期

机译：在沟道热载流子/栅极引起的漏极泄漏交替应力作用下，具有高k /金属栅叠层的n-MOSFET的增强降解
4. A Drain Current - Drain Voltage Relation for MOSFETs with High-k Gate Stacks [C] . Samares Kar Physics and technology of high-k materials 9 . 2011

机译：具有高k栅极堆叠的MOSFET的漏极电流-漏极电压关系
5. Voltage and temperature dependent gate capacitance and current model for high-K gate dielectric stack [D] . Fan, Yang-Yu 2002

机译：高K栅极电介质堆叠的电压和温度相关的栅极电容和电流模型
6. High-performance III-V MOSFET with nano-stacked high-k gate dielectric and 3D fin-shaped structure [O] . Szu-Hung Chen, Wen-Shiang Liao, Hsin-Chia Yang, 2012

机译：具有纳米堆叠的高k栅极电介质和3D鳍形结构的高性能III-V MOSFET
7. 1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks [O] . MAGNONE, P, CRUPI, F, GIUSI, G, 2009

机译：具有高k栅极堆叠的MOSFET的漏极和栅极电流中的1 / f噪声

1/f Noise in Drain and Gate Current of MOSFETs With High-k Gate Stacks

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